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VMO 1200-01F
PolarHT? Module
N-Channel Enhancement Mode
V DSS = 100 V
I D25 = 1220 A
R DS(on) = 1.25 m Ω max.
G
D
S
D
MOSFET
KS
S
KS
G
Features
Symbol
V DSS
V GS
Conditions
T VJ = 25°C to 150°C
Maximum Ratings
100 V
± 20 V
? PolarHT? MOSFET technology
- low R DSon
- dv/dt ruggedness
- fast intrinsic reverse diode
I D25
I D80
I F25
I F80
T C = 25°C
T C = 80°C
T C = 25°C (diode)
T C = 80°C (diode)
1220
970
1220
970
A
A
A
A
? package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
Symbol
R DSon
Conditions
V GS = 10 V; I D = I D80
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
T VJ = 25°C 1.00 1.25 m Ω
T VJ = 125°C 1.62 2.00 m Ω
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
Applications
V GS(th)
I DSS
I GSS
Q g
Q gs
Q gd
V DS = 20 V; I D = 3 mA
V DS = 0.8 ? V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 125°C
V GS = ± 20 V; V DS = 0 V
V GS = 10 V; V DS = 50 V; I D = 1000 A
3
1710
396
1020
5 V
0.3 mA
6 mA
1.2 μA
nC
nC
nC
? converters with high power density for
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
t d(on)
t r
t d(off)
t f
E on
E off
E rec
t d(on)
t r
t d(off)
t f
E on
E off
E rec
inductive load
V GS = 10 V; V DS = 50 V
I D = 1000 A; R G = 1.8 Ω
R G = R G ext + R out driver
inductive load
V GS = 10 V; V DS = 50 V
I D = 1000 A; R G = 1.8 Ω
R G = R G ext + R out driver
T VJ = 25°C
T VJ = 125°C
360
1620
460
1020
7.7
62.3
0.57
400
1640
560
820
8.5
58.9
0.82
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
R thJC
R thJH
with heat transfer paste (IXYS test setup) 0.065
0.053
0.088
K/W
K/W
20100614b
? 2010 IXYS All rights reserved
1-6
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